SK hynix recently unveiled its latest innovation in NAND flash technology with the introduction of the 321-layer UFS 4.1 TLC NAND flash for smartphones. This advanced storage solution offers improved speed, efficiency, and thickness, catering to the demands of modern smartphone designs and performance requirements.
Compared to its predecessor, the 238-layer design, the new 321-layer UFS 4.1 NAND flash delivers 15% higher random read speeds and 40% higher random write speeds. It also boasts a maximum sequential read speed of 4.3GB/s, enhancing overall performance.
In addition, the NAND package is thinner at 0.85mm, making it ideal for slim smartphone designs. The increased power efficiency of 7% further enhances the user experience by reducing heat generation and improving overall performance.
SK hynix's 321-layer UFS 4.1 NAND flash is designed to boost on-device AI performance through faster sequential read speeds and enhance multitasking capabilities with improved random performance. The storage will be available in capacities of 512GB and 1TB, catering to diverse user needs.
Expected to start shipping in volume in the first quarter of next year, this innovative storage solution is set to revolutionize smartphone performance and pave the way for future advancements in NAND flash technology.
Aside from smartphones, SK hynix is also developing 321-layer designs for SSDs targeting consumer and data center applications, showcasing the versatility and potential of this cutting-edge technology.
