Micron has made headlines today with the launch of its groundbreaking G9-based UFS 4.1 and UFS 3.1 storage solutions, specifically designed to enhance smartphone functionality and user experience. These new storage chips promise to unlock advanced on-device AI features, and will soon be integrated into flagship smartphone models following the anticipated arrival of Micron's 1y LPDDR5X chips in early 2026.
The UFS 4.1 and UFS 3.1 chips leverage Micron's latest G9 process node, boasting significant enhancements in power efficiency and both read and write speeds. Designed for ultra-thin and foldable smartphones, these chips will be available in various capacities ranging from 256GB to 1TB.
In addition to significant hardware advancements, Micron is introducing software enhancements that are set to improve the overall user experience and optimize AI performance. Key features of the UFS 4.1 storage solutions include support for Zoned UFS, which enhances read-write efficiency while minimizing write amplification, and a 60% improvement in data relocation and defragmentation thanks to enhanced Data Defragmentation technology. The Pinned WriteBooster feature offers up to a 30% increase in data retrieval speed from the WriteBooster buffer. Additionally, the Intelligent Latency Tracker assists users by automatically debugging latency issues through comprehensive analysis of latency logs. This last feature is also present in UFS 3.1, while the other enhancements are tailor-made for the UFS 4.1 chips.
