AI hardware requires faster memory than traditional DDR, leading to the adoption of High Bandwidth Memory (HBM). SK hynix has announced the shipment of samples of its latest HBM4E memory to customers.
The HBM4E offers a remarkable 16Gbps of bandwidth per pin, surpassing the previous HBM4 standard, which provided 10Gbps per pin. For context, Samsung began sampling its own HBM4E design a month ago, claiming a bandwidth of 14Gbps per pin.
The current design being delivered features 12 dies stacked vertically, resulting in a total capacity of 48GB per stack. Most AI accelerator designs will utilize multiple stacks to meet their performance needs.
SK hynix asserts that its HBM4E memory is 20% more power-efficient compared to its predecessor, the HBM4. The company employs MR-MUF (Mass Reflow Molded Underfill) technology, which utilizes a protective liquid between the silicon dies, enhancing circuit protection. This new design exhibits 17% lower heat resistance than the previous iteration, improving cooling efficiency.
SK hynix’s HBM4E memory does 16Gbps per pin, is 20% more power efficient“The company was able to deliver samples of the 12-stack HBM4E on schedule thanks to its advanced development and production expertise for HBM. We will collaborate closely with partners to ensure timely mass production,” stated SK hynix in its press release.
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